Fabrication method of nitride forming on silicon substrate

摘要

The invention is directed to a method for forming a nitride on a silicon substrate. In the method of the present invention, a silicon substrate is provided and a buffer layer is formed on the silicon substrate. The formation of the buffer layer includes a multi-level temperature modulation process having a plurality temperature levels and a plurality of temperature modulations. For each of the temperature modulations, the temperature is gradually decreased. A nitride is formed on the buffer layer.

主权项

1. A method for forming nitride on a silicon substrate, comprising:
providing a silicon substrate; forming a buffer layer on the silicon substrate by a multi-level temperature modulation having a plurality of temperature modulations and a plurality of temperature levels, wherein each temperature modulation comprises decreasing a process temperature, the process temperature ramps down from one temperature level to another in each temperature modulation and the process temperature at each temperature level remains unchanged until a thickness increasing amount of the buffer layer at the corresponding temperature level reaches a predetermined thickness, wherein the temperature levels successively decrease, there are n temperature levels, the process temperature at each i temperature level is lower than the process temperature at each corresponding i−1 temperature level, and 1