发明名称 |
Nonvolatile memory and related reprogramming method |
摘要 |
A method of reprogramming a nonvolatile memory device, comprising setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines, supplying a program pulse to the selected memory cells, performing a program verify operation on the selected memory cells using the first and second latches, and performing a predictive program operation on the selected memory cells according to a result of the program verify operation. In the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells. |
申请公布号 |
US9281068(B2) |
申请公布日期 |
2016.03.08 |
申请号 |
US201414217538 |
申请日期 |
2014.03.18 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Tae-Young |
分类号 |
G11C16/04;G11C16/10;G11C11/56;G11C16/34 |
主分类号 |
G11C16/04 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of reprogramming a nonvolatile memory device, comprising:
setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines; supplying a program pulse to the selected memory cells; performing a program verify operation on the selected memory cells using the first and second latches; and performing a predictive program operation on the selected memory cells according to a result of the program verify operation, wherein in the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells. |
地址 |
Suwon-si, Gyeonggi-do KR |