Systems, and devices, and methods for programming a resistive memory cell

摘要

Embodiments disclosed herein may relate to programming a memory cell with a programming pulse that comprises a quenching period having different portions.

主权项

1. A method, comprising:
providing a multi-level memory cell having more than two possible programmed states; selecting parameters for a quench period of a programming pulse based upon a desired programmed state for the memory cell; and applying the programming pulse to the memory cell to program the memory cell to the desired programmed state.