| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SiC single crystal that can improve the quality of the single crystal.SOLUTION: A method of manufacturing an SiC single crystal includes: a preparation step; a generation step; and a growth step. In the preparation step, a manufacturing apparatus is prepared which includes a crucible containing a raw material of an Si-C solution and a high-frequency coil arranged at a periphery of a side wall of the crucible. In the generation step, the raw material in the crucible is heated by the high-frequency coil to be fused so as to generate the Si-C solution. In the growth step, an SiC seed crystal is brought into contact with the Si-C solution so as to grow an SiC single crystal on the SiC seed crystal. The growth step includes a maintenance step. In the maintenance step, at least one of the crucible and high-frequency coil is moved in a height direction relatively to the other to maintain a width of variation in height-directional separation distance between a liquid level of the Si-C solution and the height center of the high-frequency coil within a predetermined range. |
