发明名称 Light-emitting diode array
摘要 The application provides a light-emitting diode array, including: a first light-emitting diode including a first area; a second area; a first isolation path between the first area and the second area, and the first isolation path including an electrode isolation layer; and an electrode contact layer covering the first area; a second light-emitting diode including a semiconductor stack layer; and a second electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode, wherein the second isolation path includes an electrical connecting structure electrically connected to the first light-emitting diode and the second light-emitting diode.
申请公布号 US9281443(B2) 申请公布日期 2016.03.08
申请号 US201313959891 申请日期 2013.08.06
申请人 EPISTAR CORPORATION 发明人 Yang Tsung-Hsien;Wu Han-Min;Wang Jhih-Sian;Chen Yi-Ming;Hsu Tzu-Ghieh
分类号 H01L29/207;H01L21/00;H01L33/08;H01L27/15;H01L33/00;H01L33/22;H01L33/38 主分类号 H01L29/207
代理机构 Ditthavong & Steiner, P.C. 代理人 Ditthavong & Steiner, P.C.
主权项 1. A light-emitting diode array, comprising: a first light-emitting diode, comprising: a first area;a second area;a first isolation path between the first area and the second area;an electrode isolation layer formed in the first isolation path; andan electrode contact layer covering the first area; a second light-emitting diode, comprising: a semiconductor stack layer;an electrical bonding pad on the semiconductor stack layer; and a second isolation path between the first light-emitting diode and the second light-emitting diode; and an electrical connecting structure partially formed in the second isolation path and electrically connecting the first light-emitting diode with the second light-emitting diode; wherein each of the first area, the second area, and the semiconductor stack layer further comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.
地址 Hsinchu TW