| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel chemical and mechanical polishing slurry composition for use in polishing a substrate having surface geometry of ruthenium and copper.SOLUTION: A method for chemical mechanical polishing of a substrate, comprises the steps of: preparing a substrate including ruthenium and copper; preparing a chemical and mechanical polishing slurry composition of pH8-12, including, as initial components, water, 0.1-25 wt% of abrasive, 0.05-1 wt% of sodium hypochlorite or potassium hypochlorite, 0.001-1 wt% of a copolymer of acrylic acid and methacrylic acid, 0.005-1 wt% of a corrosion inhibitor for copper (preferably BTA), 0-0.01 wt% of polymethyl vinyl ether (PMVE), and 0-0.1 wt% of a non-ionic surfactant; creating a dynamic contact between a chemical and mechanical polishing pad and the substrate with a down force of 0.69-34.5 kPa; and dispersing the chemical and mechanical polishing slurry composition in proximity to an interface of the chemical and mechanical polishing pad and the substrate.SELECTED DRAWING: None |
