| 摘要 |
PROBLEM TO BE SOLVED: To make flatness of an interlayer insulating film satisfactory.SOLUTION: In a method of manufacturing a semiconductor device, a wiring layer 32 and an interlayer insulating film 40 covering the wiring layer 32 are formed, and then, the interlayer insulating film 40 is CMP-polished. The method includes the following steps of: setting a pattern width of the wiring layer 32 according to a thickness of the interlayer insulating film 40 which is made to remain on the wiring layer 32 after the CMP polishing; forming the wiring layer 32 having the pattern width on a semiconductor substrate 18; forming the interlayer insulating film 40 that includes a first insulating film 40a and a second insulating film 40b having different polishing rates while covering the wiring layer 32 formed on the semiconductor substrate 18; and CMP-polishing the interlayer insulating film 40 formed while covering the wiring layer 32.SELECTED DRAWING: Figure 6 |
