| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film capacitive device with a high Q value.SOLUTION: A thin film capacitive device 1 comprises: a substrate 2; and a capacitance lead-out part 8 provided on the substrate 2. The capacitance lead-out part 8 has a thin film 3 including a composition produced by doping a barium strontium titanate expressed by the general formula, (Ba,Sr)TiO(where 0<x<1, 0<y≤1) with indium, and first and second electrodes 4 and 5 provided to be in touch with the thin film 3. The barium strontium titanate is doped with indium within a range of more than 0 to 12 atom% to 100 atom% of titanium.SELECTED DRAWING: Figure 1 |
