| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for manufacturing HEMT and SBD from a substrate having a laminate structure of first to third nitride semiconductor layers 6, 8 and 18, which can solve the problem that no Schottky junction is made if an anode electrode 24 is formed on a surface of the second nitride semiconductor layer 8 exposed by removing the third nitride semiconductor layer 18.SOLUTION: In a method for manufacturing a semiconductor device, when an AlO film 10 is exposed in a surface of a second nitride semiconductor layer 8 exposed by removing a third nitride semiconductor layer 18, an anode electrode 24 formed on the surface makes a Schottky junction. The method may be arranged so that a surface layer of the second nitride semiconductor layer, which is larger than a deep layer in band gap, is exposed. Alternatively, the method may be arranged so that the anode electrode 24 is formed after restoring an etching damage on the surface of the second nitride semiconductor layer 8.SELECTED DRAWING: Figure 1 |
