发明名称 |
BONDING WIRE FOR USE WITH SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING SAID BONDING WIRE |
摘要 |
A bonding wire for use with semiconductor devices that, in order to minimize leaning problems and spring problems, is characterized in that: (1) a cross-section that is parallel to the lengthwise direction of the wire and contains the center of the wire (a wire-center cross-section) contains no crystal grains (fibrous structures) that have a major axis (a)/minor axis (b) ratio (a/b) of 10 or more and an area of 15 mm[sup]2[/sup] or more; (2) 50 pcnt to 90 pcnt of the area of the wire-center cross-section exhibits a crystal orientation of [100] within 15o of the lengthwise direction of the wire; and (3) 50 pcnt to 90 pcnt of the area of the surface of the wire exhibits a crystal orientation of [100] within 15o of the lengthwise direction of the wire. During a wire-drawing step, wire drawing that results in an area reduction of at least 15.5 pcnt is performed at least once, and a final heat-treatment temperature and a final pre-heat-treatment temperature are set to within prescribed ranges. |
申请公布号 |
PH12015502633(A1) |
申请公布日期 |
2016.03.07 |
申请号 |
PH12015502633 |
申请日期 |
2015.11.26 |
申请人 |
NIPPON STEEL AND SUMIKIN MATERIALS CO., LTD.;NIPPON MICROMETAL CORPORATION |
发明人 |
YAMADA, TAKASHI;ODA, DAIZO;OISHI, RYO;HAIBARA, TERUO;UNO, TOMOHIRO |
分类号 |
B21C1/00;C22C5/06;C22C5/08;C22F1/00;C22F1/14;H01L21/60 |
主分类号 |
B21C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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