发明名称 ETCHING CHARACTERISTICS ESTIMATION METHOD, PROGRAM, INFORMATION PROCESSOR, TREATMENT APPARATUS, DESIGNING METHOD AND MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an information processor capable of calculating etching characteristics in the case when a workpiece contains nitride and etching gas such as CHxFy gas contains hydrogen.SOLUTION: The information processor calculates plural fluxes by using a surface reaction model in which the treatment surface of a workpiece includes a protection film layer and reaction layer. Based on the removal items prescribing to remove the protection film layer, the information processor calculates the thickness of the protection film layer while changing removal items according to comparison results of plural fluxes in the calculation formula for calculating the thickness of the protection film layer.SELECTED DRAWING: Figure 1
申请公布号 JP2016032064(A) 申请公布日期 2016.03.07
申请号 JP20140154811 申请日期 2014.07.30
申请人 SONY CORP 发明人 KUBOI NOBUYUKI;TATSUMI TETSUYA
分类号 H01L21/3065 主分类号 H01L21/3065
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