METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER, AND SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide: a method for manufacturing an SiC epitaxial wafer by which end defects can be reduced effectively and sufficiently; and a SiC epitaxial wafer which enables, by sufficiently reducing the end defects, the achievement of a high effective area percentage by which chips can be obtained therefrom.SOLUTION: A method for manufacturing an SiC epitaxial wafer in such a way that an SiC epitaxial layer is formed on an SiC monocrystalline substrate with an off angle comprises the steps of roughly polishing a peripheral end of the SiC monocrystalline substrate on the side of a starting point of a step-flow growth, and further polishing the resultant substrate for finish before formation of the SiC epitaxial layer.SELECTED DRAWING: Figure 1