摘要 |
The present invention relates to a salt having a group represented by chemical formula (a). The present invention further relates to an acid generator, a resist composition, and a method for forming a resist pattern. In the chemical formula (a), x^a and x^b respectively refer to an oxygen atom or a sulfur atom, and x^1 refers to a divalent group having an alicyclic hydrocarbon group. In addition, a methylene group can be substituted to the oxygen atom or a carbonyl group, and a hydrogen atom can be substituted to a hydroxy group or a fluorine atom, wherein * is a binding site. According to the present invention, the salt has a low line edge roughness (LER) which is enough to provide a resist layer, and the salt can be used in a resist composition which is useful for semiconductor micromachining. |