| 摘要 |
The present invention discloses an ion implantation method and an ion implanter. The flow ratio of a dopant gas to a dilution gas transmitted to an ion source is controlled to be 3:1 to 20:1. The dopant gas may be the combination of hydrogen phosphide, boron trifluoride, carbon dioxide or their combination. The dilution gas may be hydrogen, helium, or their combination. If there are helium and hydrogen together in the dilution gas, the volume ratio of helium to hydrogen is controlled to be 1:99 to 3:17. By using a specific process, the lifetime of the ion source for usage can be extended. |
