发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device capable of retaining data for a long time.SOLUTION: The semiconductor device includes: first to third transistors; a fourth transistor having a first gate and a second gate; first to third nodes; a capacitive element; and an input terminal. A source of the first transistor is connected to the input terminal. A drain of the first transistor and a source of the second transistor are connected to the first node. A gate of the second transistor, a drain of the second transistor, and a source of the third transistor are connected to the second node. A gate of the third transistor, a drain of the third transistor, the capacitive element, and the second gate of the fourth transistor are connected to the third node.SELECTED DRAWING: Figure 1
申请公布号 JP2016032112(A) 申请公布日期 2016.03.07
申请号 JP20150146319 申请日期 2015.07.24
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOBAYASHI HIDETOMO
分类号 H01L29/786;G09F9/30;G11C11/405;H01L21/8242;H01L27/108;H03K3/356 主分类号 H01L29/786
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