| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus or a plasma processing method, which inhibits deterioration in productivity and yield.SOLUTION: A plasma processing apparatus comprises: a processing chamber arranged in a vacuum container, for forming plasma inside; a stage which is arranged in the processing chamber and where a processing target wafer by the plasma is placed on a top face; a metal base material which is arranged inside the stage and high-frequency power is supplied during processing of the wafer; a plurality of film electrodes arranged inside a dielectric film which composes a wafer placement surface of the stage, for electrostatically adsorbing the wafer; a DC power supply with positive and negative terminals connected to the film electrodes, for supplying DC power to the electrodes; and a high-frequency pass filter arranged between at least one of the plurality of film electrodes and grounding potential, for passing the high-frequency power, in which impedance of the high-frequency pass filter is set at a predetermined value and processing of the wafer is performed.SELECTED DRAWING: Figure 1 |
