| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method which make possible to correctly perform the process of selectively etching, of a silicon oxide film and a silicon nitride film on a substrate, the silicon nitride film.SOLUTION: A substrate processing device comprises: a new liquid supplying unit 8 having a circulation system for circulating a phosphoric acid aqueous solution in a production tank 80. In the circulation system, a filter 82 and a bypass tube 86a bypassing the filter 82 are provided. The circulation system is arranged to be switched between first and second states; in the first state, the phosphoric acid aqueous solution is circulated through the bypass tube 86a, whereas in the second state, the phosphoric acid aqueous solution is circulated through the filter 82. The circulation system is switched to the first state when supplying a silicon-containing solution to the production tank 80. After that, if it is determined that silicon particles of the silicon-containing solution are uniformly dispersed in the phosphoric acid aqueous solution, the circulation system is switched to the second state.SELECTED DRAWING: Figure 2 |
