| 摘要 |
PROBLEM TO BE SOLVED: To provide chemical mechanical polishing (CMP) compositions, methods and systems for polishing cobalt or cobalt-containing substrates.SOLUTION: Dual, or at least two chelators are used in the CMP polishing compositions as complexing agents for achieving unique synergetic effects to afford high, tunable Co removal rates while having low static etch rates on a Co film surface for efficient Co corrosion protection during a CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and a dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.SELECTED DRAWING: Figure 1 |
