| 摘要 |
PROBLEM TO BE SOLVED: To improve element characteristics of a reverse conducting IGBT.SOLUTION: A first collector region 6, a back side emitter region 5, a first IGBT cell 110 and a first diode cell 120 define a rc-IGBT area 151, and a second collector region 9, a second IGBT cell 210 and a first diode cell 220 define a pilot IGBT area 152. The rc-IGBT area 151 is in ohmic contact with the first electrode, and includes a second conductive type of a first semiconductor region arranged between a drift region 1 and the first electrode. The pilot IGBT area 152 is in ohmic contact with the first electrode, and includes a second conductive type of a second semiconductor region arranged between the drift region 1 and the first electrode. The number of second conductive type of dopants per area in a horizontal direction of the first semiconductor region exceeds the number of second conductive type of dopants per area in a horizontal direction of the second semiconductor region.SELECTED DRAWING: Figure 1 |
