| 摘要 |
PROBLEM TO BE SOLVED: To provide a stripping solution for a photoresist, which can strip a photoresist film that is altered to be less peelable by exposure to an etchant for a Cu film in the process of wet-etching a Cu film or a Cu alloy film on a substrate having a large area to form wiring lines or the like, without damaging the Cu film, and which prevents reduction in adhesive force between the Cu film and a layer to be deposited on the Cu film.SOLUTION: The stripping solution for a photoresist comprises: water by 40 to 60 mass% or water by more than 40 mass% and 60 mass% or less; a tertiary alkanolamine by 1 to 15 mass%; and a polar solvent by 25 to 59 mass%. Otherwise, the stripping solution for a photoresist comprises: water by more than 60 mass% and 80 mass% or less or water by 60 mass% to 80 mass%; a tertiary alkanolamine by 1 to 8 mass%; and a polar solvent by 12 to 39 mass%.SELECTED DRAWING: None |
