| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for polishing a germanium wafer, which can make the surface roughness of a polished Ge surface adequately small, and which can sufficiently suppress the formation of an interface defect such as a void or a blister even if the resultant germanium wafer is used as a wafer to laminate to another.SOLUTION: A method for polishing a germanium wafer with its surface made of germanium, comprises the steps of: adding a hydrogen peroxide solution to a first polishing slurry, which is an alkali aqueous solution containing colloidal silica, thereby preparing a second polishing slurry; and using the second polishing slurry to polish the germanium wafer surface. In the method, the hydrogen peroxide solution is added to the first polishing slurry at a concentration equivalent to a concentration when the hydrogen peroxide solution of 30 wt.% is added by a volume of more than 0 vol.% and 0.1 vol.% or less to the volume of the first polishing slurry, and the second polishing slurry with the hydrogen peroxide solution added thereto is used for the polishing.SELECTED DRAWING: Figure 1 |
