发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
Provided is a plasma processing apparatus which improves the efficiency of processing. The plasma processing apparatus processes an electrostatic absorbed sample on a sample holder located in a processing room inside a vacuum container by using a plasm formed in the processing room. The sample holder comprises: a plurality of push pins which vertically move the sample above the sample holder; a dielectric membrane having a protrusion where the sample is put; a gas feeding inlet which is located on the dielectric membrane and supplies gases into a gap between the sample and the dielectric membrane; and a through-hole opening wherein the push pins are placed. The sample holder connects to a dispensing pipe line having a supplying pipe which is communicated with the gas feeding inlet and flows the gas supplied into the gap, and a discharging pipe which is communicated with the through-hole opening and discharges the gas supplied into the gap, and a connecting pipe communicating the supplying pipe with the discharging pipe. The sample holder supplies the gas from the supplying pipe to the inside of the through-hole opening via the gap and the concerned gap, when the communication of the supplying pipe interposing the connecting pipe with an outlet pipe is closed. |
申请公布号 |
KR20160024730(A) |
申请公布日期 |
2016.03.07 |
申请号 |
KR20150024446 |
申请日期 |
2015.02.17 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
TANDOU TAKUMI;MAKINO AKITAKA |
分类号 |
H01L21/3065;H01L21/02;H01L21/677;H01L21/683 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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