发明名称 PLASMA PROCESSING APPARATUS
摘要 Provided is a plasma processing apparatus which improves the efficiency of processing. The plasma processing apparatus processes an electrostatic absorbed sample on a sample holder located in a processing room inside a vacuum container by using a plasm formed in the processing room. The sample holder comprises: a plurality of push pins which vertically move the sample above the sample holder; a dielectric membrane having a protrusion where the sample is put; a gas feeding inlet which is located on the dielectric membrane and supplies gases into a gap between the sample and the dielectric membrane; and a through-hole opening wherein the push pins are placed. The sample holder connects to a dispensing pipe line having a supplying pipe which is communicated with the gas feeding inlet and flows the gas supplied into the gap, and a discharging pipe which is communicated with the through-hole opening and discharges the gas supplied into the gap, and a connecting pipe communicating the supplying pipe with the discharging pipe. The sample holder supplies the gas from the supplying pipe to the inside of the through-hole opening via the gap and the concerned gap, when the communication of the supplying pipe interposing the connecting pipe with an outlet pipe is closed.
申请公布号 KR20160024730(A) 申请公布日期 2016.03.07
申请号 KR20150024446 申请日期 2015.02.17
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 TANDOU TAKUMI;MAKINO AKITAKA
分类号 H01L21/3065;H01L21/02;H01L21/677;H01L21/683 主分类号 H01L21/3065
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