MEMORY DEVICE DISPOSED SELECTIVELY LANDING PADS EXPANDED OVER A SIGNAL LINE

摘要

Proposed is a memory device including: a substrate including a cell region and a peripheral region; gate line stacks and bit line stacks which vertically intersect each other in the cell region; buried contacts which are arranged in regions shared by neighboring gate line stacks and neighboring bit line stacks at the same time; extended landing pads which are connected to the buried contacts, and have an extended pad extended to an upper part of the adjacent bit line stack, and are arranged in rows; landing pads which are separated from the extended landing pads by column, and are connected to the buried contacts, and have a horizontal width smaller than the extended landing pads; and a first storage node which is connected to the extended part of the extended landing pads and second storage nodes which are connected to the landing pad. The objective of the present invention is to provide the memory device including the landing pads which are selectively arranged in order to secure a process margin.