SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING EPITAXIAL LAYER

摘要

The present invention relates to a manufacturing method of a semiconductor device according to an embodiment of the present invention includes a step of alternatively stacking up layer insulation layers and sacrificial layers on a substrate; a step of forming opening units forming recesses on the substrate by penetrating through the layer insulation layers and the sacrificial layers; a step of forming a first epitaxial layer along a recessed surface of the substrate within a recess region of the substrate; and a step of filling the recess region of the substrate with the first epitaxial layer as a seed layer and forming a second epitaxial layer extended to the upper side of the substrate. The purpose of the present invention is to provide the semiconductor device with improved reliability and the manufacturing method of the semiconductor device.