| 摘要 |
In the present invention, a photomask for a flat panel display is manufactured by forming a phase inversion film patterns which induce destructive interference effect through inverting the phase of an exposure light about 180° with respect to a patterned part of a semi-transmitting film. The photomask of the present invention can improve the definition of remaining resist film which corresponds to a channel unit transcribed through the photomask while enhancing the definition of patterns formed thereby. The manufacturing method of the photomask comprises the steps of: forming a semi-transmitting film, a phase inversion film, and a first resist film pattern on a transparent substrate; forming a phase inversion film pattern by etching a part of the phase inversion film; removing the first resist film pattern; forming a second resist film pattern which exposes a part of the semi-transmitting film; and forming a semi-transmitting film pattern by etching a part of the semi-transmitting film. The photomask for a flat panel display in the present invention has a light penetration unit, a semi-transmitting film, and a light shading film. |
