发明名称 METHOD AND APPARATUS FOR GROWING Fe-Ga-BASED ALLOY SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide an Fe-Ga-based alloy single crystal that can be produced in the form of a large crystal with a highly accurate chemical composition and a highly accurate crystal orientation at a low cost, and to provide a method for growing the Fe-Ga-based alloy single crystal.SOLUTION: In a method and apparatus for growing an Fe-Ga-based alloy single crystal, a crucible to be used is a double crucible consisting of an outer crucible 19 made of graphite and an inner crucible 18 made of alumina arranged in the outer crucible 19, and after a seed crystal 210 is brought into contact with an Fe-Ga material 300 melt in the crucible, the seed crystal 210 is pulled up to grow a single crystal 200. In the method for growing the Fe-Ga-based alloy single crystal, a material of the inner crucible 18 may be a non-oxide ceramic such as boron nitride, whereby generation of suspended matter such as Ga oxides and Ga-Al-O-C compounds is suppressed during the growth of the single crystal to prevent the polycrystallization and hollowing of the crystal due to the suspended matter.SELECTED DRAWING: Figure 1
申请公布号 JP2016028831(A) 申请公布日期 2016.03.03
申请号 JP20150091284 申请日期 2015.04.28
申请人 FUKUDA CRYSTAL LABORATORY 发明人 FUKUDA TSUGUO;WATANABE KIYOKAZU;NANTO TOKI;SUZUKI SHIGERU;UENO TOSHIYUKI
分类号 B22D27/04;C30B15/10;C30B29/52 主分类号 B22D27/04
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