INTEGRATED CMOS AND MEMS DEVICES WITH AIR DIELETRICS

摘要

A monolithically integrated CMOS and MEMS device. The device includes a first semiconductor substrate having a first surface region and one or more CMOS IC devices on a CMOS IC device region overlying the first surface region. The CMOS IC device region can also have a CMOS surface region. A bonding material can be provided overlying the CMOS surface region to form an interface by which a second semiconductor substrate can be joined to the CMOS surface region. The second semiconductor substrate has a second surface region coupled to the CMOS surface region by bonding the second surface region to the bonding material. The second semiconductor substrate includes one or more first air dielectric regions. One or more free standing MEMS structures can be formed within one or more portions of the processed first substrate.

主权项

1. A monolithic integrated CMOS and MEMS device, the device comprising:
a thickness of a first semiconductor substrate having a first top surface region and a first bottom surface region; one or more CMOS integrated circuit (IC) devices provided on a CMOS integrated circuit (IC) device region coupled to the first bottom surface region, the CMOS IC device region having a CMOS surface region, wherein the one or more CMOS IC devices includes a plurality of transistors configured in an upside-down orientation; a bonding material coupled to the CMOS surface region; a second semiconductor substrate having a second top surface region and a second bottom surface region, the second top surface region coupled to the CMOS surface region by bonding the second top surface region to the bonding material, the second semiconductor substrate comprising one or more first air dielectric regions spatially configured towards the second top surface region; one or more free standing MEMS structures overlying and adjacent to one or more portions of the first top surface region of the thickness of the first semiconductor substrate.