| 摘要 |
Improvement in yield of a semiconductor device is obtained. In addition, increase in service life of a socket terminal is obtained. A projecting portion PJ1 and a projecting portion PJ2 are provided in an end portion PU of a socket terminal STE1. Thus, it is possible to enable contact between a lead and the socket terminal STE in which a large current is caused to flow, at two points by a contact using the projecting portion PJ1 and by a contact using the projecting portion PJ2, for example. As a result, the current flowing from the socket terminal STE1 to the lead flows by being dispersed into a path flowing in the projecting portion PJ1 and a path flowing in the projecting portion PJ2. Accordingly, it is possible to suppress increase of temperature of a contact portion between the socket terminal STE1 and the lead even in a case where the large current is caused to flow between the socket terminal STE1 and the lead. |
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) electrically connecting a first semiconductor chip with a first external terminal, and electrically connecting the first semiconductor chip with a second external terminal; (b) after the step (a), sealing the first semiconductor chip such that a part of each of the first external terminal and the second external terminal is exposed, and forming a sealing body; (c) after the step (b), forming a first conductive film on the part of the first external terminal exposed from the sealing body, and forming a second conductive film on the part of the second external terminal exposed from the sealing body; (d) after the step (c), disposing a device to be inspected, manufactured through the steps (a) to (c), in a housing portion of a socket, contacting a first socket terminal provided in the socket with the first external terminal via the first conductive film, and contacting a second socket terminal provided in the socket with the second external terminal via the second conductive film; and (e) after the step (d), supplying a first current value to between the first socket terminal and the second socket terminal for a first time, and inspecting an electrical characteristic of the first semiconductor chip, wherein each of the first socket terminal and the second socket terminal includes:
a main body portion including a support portion,a plate-like portion connected to the support portion, and including an end portion projected toward the device, anda plurality of projecting portions integrally provided in the end portion. |
