| 发明名称 |
TEMPLATE MANUFACTURING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
In a template manufacturing method of an embodiment, a first pattern is formed on a first template. A plurality of times of imprint processing using the first template is performed. A resist pattern is formed on a plurality of areas on a second template. At this time, processing of applying resist on the second template and processing of pressing the first pattern against the resist are repeatedly performed. |
| 申请公布号 |
US2016064214(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514600176 |
申请日期 |
2015.01.20 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
FUJISAWA Tadahito |
| 分类号 |
H01L21/027;H01L21/67;H01L21/304;H01L21/311;H01L23/544 |
主分类号 |
H01L21/027 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A template manufacturing method comprising:
forming a first pattern on a first template; performing a plurality of times of imprint processing using the first template, and forming a resist pattern corresponding to the first pattern on a plurality of areas on a second template; and performing etching from above the resist pattern, and forming a second pattern on the second template, wherein when performing the plurality of times of imprint processing, processing of applying resist on the second template, processing of pressing the first pattern against the applied resist, and processing of forming the resist pattern in an area on which the resist is applied to, are repeatedly performed. |
| 地址 |
Minato-ku JP |
