| 主权项 |
1. A method for supplying a gas into a processing container of a plasma processing apparatus configured to process a processing target object,
wherein the plasma processing apparatus includes: the processing container; a mounting stage provided within the processing container to constitute a lower electrode; a shower head provided above the mounting stage to constitute an upper electrode; a high frequency power supply configured to supply a high frequency power to one of the upper electrode and the lower electrode; and a gas supply system configured to supply a processing gas and an additional gas to the shower head, wherein the shower head includes a central gas inlet portion facing a central region of the mounting stage, and a peripheral gas inlet portion facing a region outside the central region of the mounting stage, and the gas supply system includes:
a first gas source configured to supply the processing gas;a second gas source configured to supply the additional gas;a first branch line and a second branch line configured to supply the processing gas from the first gas source, to the central gas inlet portion and the peripheral gas inlet portion, respectively; anda gas line connecting the second gas source to the second branch line and including a flow rate controller, a valve provided between the flow rate controller and the second branch line, and a tube provided between the flow rate controller and the valve, and wherein the method comprises: supplying the processing gas to each of the central gas inlet portion and the peripheral gas inlet portion through the first branch line and the second branch line, filling the additional gas in the tube by closing the valve, opening the valve after filling the additional gas, and supplying the high frequency power to one of the upper electrode and the lower electrode from the high frequency power supply after opening the valve. |
