| 发明名称 |
SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
A substrate processing apparatus including a process chamber configured to receive a plurality of substrates oriented in a horizontal manner and vertically arranged with respect to the process chamber, a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are sacked, an exhaust unit configured to exhaust the process gas from the process chamber, and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled may be provided. |
| 申请公布号 |
US2016064190(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514689559 |
申请日期 |
2015.04.17 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
NOH Young-jin;PARK Kwang-min;SEO Eun-sung;SONG Young-chang;AHN Jae-young;LIM Hun-hyeong;CHOI Ji-hoon |
| 分类号 |
H01J37/32 |
主分类号 |
H01J37/32 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus comprising:
a process chamber configured to receive a plurality of substrates, oriented in a horizontal manner and vertically arranged with respect to the process chamber; a process gas supply unit configured to supply at least one process gas to the process chamber through a process gas supply nozzle, the process gas supply nozzle along an inner wall of the process chamber in a direction in which the substrates are stacked; an exhaust unit configured to exhaust the process gas in the process chamber; and a blocking gas supply unit configured to supply a blocking gas through a blocking gas injector provided in a circumferential direction of the process chamber such that a flow of the process gas in the process chamber is controlled. |
| 地址 |
Suwon-si KR |
