| 发明名称 |
MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a magnetic memory device includes an interlayer insulating film, a bottom electrode formed in the interlayer insulating film, a buffer layer formed on the bottom electrode, and a stacked structure formed on the buffer layer and including a first magnetic layer functioning as a magnetic storage layer, wherein a portion of the buffer layer located on a central portion of the bottom electrode is thicker than a portion of the buffer layer located on a peripheral portion of the bottom electrode. |
| 申请公布号 |
US2016064648(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514636961 |
申请日期 |
2015.03.03 |
| 申请人 |
TSUBATA Shuichi;YOSHIKAWA Masatoshi;SETO Satoshi |
发明人 |
TSUBATA Shuichi;YOSHIKAWA Masatoshi;SETO Satoshi |
| 分类号 |
H01L43/02;H01L43/10;H01L43/12;H01L43/08 |
主分类号 |
H01L43/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device comprising:
an interlayer insulating film; a bottom electrode formed in the interlayer insulating film; a buffer layer formed on the bottom electrode; and a stacked structure formed on the buffer layer and including a first magnetic layer functioning as a magnetic storage layer, wherein a portion of the buffer layer located on a central portion of the bottom electrode is thicker than a portion of the buffer layer located on a peripheral portion of the bottom electrode. |
| 地址 |
Seoul KR |
