Deep Ultraviolet Light Emitting Diode

摘要

A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer, is provided. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

主权项

1. A light emitting heterostructure comprising:
an n-type contact layer formed of a group III nitride material; and a light generating structure adjacent to the n-type contact layer, the light generating structure formed within a group III nitride material having an aluminum molar fraction greater than fifty percent and forming a conduction band energy tub with respect to the n-type contact layer and including a plurality of quantum wells, wherein a difference between a conduction band edge energy of the n-type contact layer and an electron ground state energy of a quantum well in the plurality of quantum wells is greater than an energy of a polar optical phonon in a material of the light generating structure, and wherein a width of the light generating structure is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the material forming the conduction band energy tub.