发明名称 |
NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
A nitride semiconductor device includes a transistor having a semiconductor stacked body formed on a substrate, and a pn light-emitting body formed on the semiconductor stacked body. The semiconductor stacked body includes a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer. The transistor includes: the semiconductor stacked body; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode. The pn light-emitting body includes a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, in which the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor. |
申请公布号 |
US2016064600(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514934244 |
申请日期 |
2015.11.06 |
申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
KURODA MASAYUKI;YANAGIHARA MANABU;OKI SHINICHI |
分类号 |
H01L33/06;H01L33/00;H01L33/18;H01L33/32 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
1. A nitride semiconductor device comprising:
a transistor having: a semiconductor stacked body formed on a substrate, and including a first nitride semiconductor layer, and a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a bandgap wider than that of the first nitride semiconductor layer; a source electrode and a drain electrode formed away from each other on the semiconductor stacked body; and a gate electrode provided between the source electrode and the drain electrode and formed away from the source electrode and the drain electrode; and a pn light-emitting body formed on the semiconductor stacked body, and including a p-type nitride semiconductor layer and an n-type nitride semiconductor layer to emit a light beam having an energy value higher than an electron trapping level existing in the semiconductor stacked body, wherein the p-type nitride semiconductor layer of the pn light-emitting body is electrically connected to the gate electrode, and functions as a gate of the transistor. |
地址 |
Osaka JP |