发明名称 |
Semiconductor Device Package and Methods of Packaging Thereof |
摘要 |
An embodiment of the present invention describes a method for forming a doped region at a first major surface of a semiconductor substrate where the first doped region being part of a first semiconductor device. The method includes forming an opening from the first major surface into the semiconductor substrate and attaching a semiconductor die to the semiconductor substrate at the opening. The semiconductor die includes a second semiconductor device, which is a different type of semiconductor device than the first semiconductor device. The method further includes forming a chip isolation region on sidewalls of the opening and surrounding the second semiconductor device, and singulating the semiconductor substrate. |
申请公布号 |
US2016064362(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201414478944 |
申请日期 |
2014.09.05 |
申请人 |
Infineon Technologies AG |
发明人 |
Bonart Dietrich |
分类号 |
H01L25/16;H01L23/528;H01L21/78;H01L21/768;H01L25/00;H01L25/18 |
主分类号 |
H01L25/16 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a first doped region at a first major surface of a semiconductor substrate, the first doped region being part of a first semiconductor device; forming an opening from the first major surface into the semiconductor substrate; attaching a semiconductor die to the semiconductor substrate at the opening, the semiconductor die comprising a second semiconductor device, wherein the second semiconductor device is a different type of semiconductor device than the first semiconductor device, wherein the attaching comprises heating the semiconductor substrate to form a conductive bond between the semiconductor die and the semiconductor substrate; forming a chip isolation region on sidewalls of the opening and surrounding the second semiconductor device; and singulating the semiconductor substrate. |
地址 |
Neubiberg DE |