发明名称 Semiconductor Device Package and Methods of Packaging Thereof
摘要 An embodiment of the present invention describes a method for forming a doped region at a first major surface of a semiconductor substrate where the first doped region being part of a first semiconductor device. The method includes forming an opening from the first major surface into the semiconductor substrate and attaching a semiconductor die to the semiconductor substrate at the opening. The semiconductor die includes a second semiconductor device, which is a different type of semiconductor device than the first semiconductor device. The method further includes forming a chip isolation region on sidewalls of the opening and surrounding the second semiconductor device, and singulating the semiconductor substrate.
申请公布号 US2016064362(A1) 申请公布日期 2016.03.03
申请号 US201414478944 申请日期 2014.09.05
申请人 Infineon Technologies AG 发明人 Bonart Dietrich
分类号 H01L25/16;H01L23/528;H01L21/78;H01L21/768;H01L25/00;H01L25/18 主分类号 H01L25/16
代理机构 代理人
主权项 1. A method of forming a semiconductor device, the method comprising: forming a first doped region at a first major surface of a semiconductor substrate, the first doped region being part of a first semiconductor device; forming an opening from the first major surface into the semiconductor substrate; attaching a semiconductor die to the semiconductor substrate at the opening, the semiconductor die comprising a second semiconductor device, wherein the second semiconductor device is a different type of semiconductor device than the first semiconductor device, wherein the attaching comprises heating the semiconductor substrate to form a conductive bond between the semiconductor die and the semiconductor substrate; forming a chip isolation region on sidewalls of the opening and surrounding the second semiconductor device; and singulating the semiconductor substrate.
地址 Neubiberg DE