| 发明名称 |
INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS |
| 摘要 |
Methods for fabricating integrated circuits and components thereof are provided. In accordance with an exemplary embodiment, a method for fabricating an integrated circuit is provided. The method includes providing a semiconductor substrate with a first gate structure and a second gate structure and a shallow trench isolation region outside of the first and second gate structures, depositing a mask on the first gate structure, and depositing a protection layer on the shallow trench isolation region to embed a STI protective cap. |
| 申请公布号 |
US2016064286(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414476031 |
申请日期 |
2014.09.03 |
| 申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Dilliway Gabriela;Bai Bo;Javorka Peter;Triyoso Dina H. |
| 分类号 |
H01L21/8238;H01L27/092 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an integrated circuit, comprising:
providing a semiconductor substrate with a first gate structure and a second gate structure and a shallow trench isolation region outside of the first and second gate structures; depositing a mask on the first gate structure; and depositing a protection layer on the shallow trench isolation region to embed a STI protective cap. |
| 地址 |
Grand Cayman KY |
