发明名称 LOCAL DOPING OF TWO-DIMENSIONAL MATERIALS
摘要 This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.
申请公布号 US2016064249(A1) 申请公布日期 2016.03.03
申请号 US201514833407 申请日期 2015.08.24
申请人 Wong Dillon;Velasco, JR. Jairo;Ju Long;Kahn Salman;Lee Juwon;Germany Chad E.;Zettl Alexander K.;Wang Feng;Crommie Michael F. 发明人 Wong Dillon;Velasco, JR. Jairo;Ju Long;Kahn Salman;Lee Juwon;Germany Chad E.;Zettl Alexander K.;Wang Feng;Crommie Michael F.
分类号 H01L21/326;H01L21/479;H01L21/02 主分类号 H01L21/326
代理机构 代理人
主权项 1. A method comprising: (a) forming an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a two-dimensional (2D) material disposed on the second insulator; (b) applying a first voltage between the 2D material and the substrate; (c) with the first voltage applied between the 2D material and the substrate, applying a second voltage between the 2D material and a probe positioned proximate the 2D material; (d) removing the second voltage between the 2D material and the probe; and (e) removing the first voltage between the 2D material and the substrate, a portion of the 2D material proximate the probe in operation (c) having a different electron density compared to a remainder of the 2D material.
地址 Alameda CA US