METHODS OF PATTERNING FEATURES HAVING DIFFERING WIDTHS

摘要

A method includes forming a layer of material above a semiconductor substrate and performing a first sidewall image transfer process to form a first plurality of spacers and a second plurality of spacers above the layer of material, wherein the first and second pluralities of spacers are positioned above respective first and second regions of the semiconductor substrate and have a same initial width and a same pitch spacing. A masking layer is formed above the layer of material so as to cover the first plurality of spacers and expose the second plurality of spacers, and a first etching process is performed through the masking layer on the exposed second plurality of spacers so as to form a plurality of reduced-width spacers having a width that is less than the initial width, wherein the first plurality of spacers and the plurality of reduced-width spacers define an etch mask.

主权项

1. A method, comprising:
forming a layer of material above a semiconductor substrate; performing a first sidewall image transfer process to form a first plurality of spacers and a second plurality of spacers above said layer of material, wherein said first plurality of spacers are positioned above a first region of said semiconductor substrate and said second plurality of spacers are positioned above a second region of said semiconductor substrate, said first and second pluralities of spacers having a same initial width and a same pitch spacing; forming a masking layer above said layer of material, said masking layer covering said first plurality of spacers and exposing said second plurality of spacers; and performing a first etching process through said masking layer on said exposed second plurality of spacers so as to form a plurality of reduced-width spacers having a width that is less than said initial width, wherein said first plurality of spacers and said plurality of reduced-width spacers define an etch mask.