| 发明名称 |
METHOD OF FABRICATING A SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device includes etching a substrate to form a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate, wherein each trench of the plurality of first trenches extends downward from the substrate major surface to a first height, and each trench of the plurality of second trenches extends downward from the substrate major surface to a second height greater than the first height. The method includes forming a first isolation structure in each of the plurality of first trenches. The method includes forming a second isolation structure in each of the plurality of second trenches, wherein a difference between a height of the first isolation structure and the first height equals a difference between a height of the second isolation structure and the second height. |
| 申请公布号 |
US2016064234(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514936958 |
申请日期 |
2015.11.10 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN Yu Chao;PENG Chih-Tang;YANG Shun-Hui;CHEN Ryan Chia-Jen;CHEN Chao-Cheng |
| 分类号 |
H01L21/3065;H01L21/8234;H01L21/762 |
主分类号 |
H01L21/3065 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device comprising:
patterning a hardmask layer over a substrate comprising a major surface; etching the substrate to form a plurality of first trenches and a plurality of second trenches performed at an electrostatic chuck (ESC) temperature between about 90° C. to 120° C. in the substrate, wherein each trench of the plurality of first trenches has a first width and extends downward from the substrate major surface to a first height, and each trench of the plurality of second trenches has a second width less than first width and extends downward from the substrate major surface to a second height greater than the first height; forming a first isolation structure partially filling each first trench of the plurality of first trenches; and forming a second isolation structure partially filling each second trench of the plurality of second trenches, wherein a difference between a height of the first isolation structure and the first height is substantially equal to a difference between a height of the second isolation structure and the second height. |
| 地址 |
Hsinchu TW |
