SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes first pillar-shaped semiconductor layers, a first gate insulating film formed around the first pillar-shaped semiconductor layers, gate electrodes formed of metal and formed around the first gate insulating film, gate lines formed of metal and connected to the gate electrodes, a second gate insulating film formed around upper portions of the first pillar-shaped semiconductor layers, first contacts formed of a first metal material and formed around the second gate insulating film, second contacts formed of a second metal material and connecting upper portions of the first contacts and upper portions of the first pillar-shaped semiconductor layers, second diffusion layers formed in lower portions of the first pillar-shaped semiconductor layers, pillar-shaped insulator layers formed on the second contacts, variable-resistance films formed around upper portions of the pillar-shaped insulator layers, and lower electrodes formed around lower portions of the pillar-shaped insulator layers and connected to the variable-resistance films.

主权项

1. A semiconductor device, comprising:
a first pillar-shaped semiconductor layer, a first gate insulating film formed around said first pillar-shaped semiconductor layer, a gate electrode formed of metal and formed around said first gate insulating film, a gate line formed of metal and connected to said gate electrode, a second gate insulating film formed around an upper portion of said first pillar-shaped semiconductor layer, a first contact formed of a first metal material and formed around said second gate insulating film, a second contact formed of a second metal material and connecting an upper portion of said first contact and an upper portion of said first pillar-shaped semiconductor layer, a second diffusion layer formed in a lower portion of said first pillar-shaped semiconductor layer, a pillar-shaped insulator layer formed on said second contact, a variable-resistance film formed around an upper portion of said pillar-shaped insulator layer, and a lower electrode formed around a lower portion of said pillar-shaped insulator layer and connected to said variable-resistance film.