| 发明名称 |
SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND OPTICAL COUPLING DEVICE |
| 摘要 |
A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of Inx (Ga1-yAly)1-xAs (0<X≦0.2, 0<y<1), and (n+1) barrier layers formed of Ga1-zAlzAs (0<z<1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less. |
| 申请公布号 |
US2016064599(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514819196 |
申请日期 |
2015.08.05 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUJIMOTO Kenji;KAMAKURA Takanobu |
| 分类号 |
H01L33/06;H01L33/10;H01L25/16;H01L33/30 |
主分类号 |
H01L33/06 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A semiconductor light-emitting element, comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor of a second conductivity type on the first semiconductor layer; and a light emitting layer between the first and second semiconductor layers, the light emitting layer including a well layer formed of Inx(Ga1-yAly)1-xAs (0<x≦0.2, 0<y<1), and two barrier layers formed of Ga1-zAlzAs (0<z<1), wherein the well layer is between the two barrier layers. |
| 地址 |
Tokyo JP |
