SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor substrate has a main surface with an n type offset region having a trench portion formed of a plurality of trenches extending in a direction from an n+ drain region toward an n+ source region. The plurality of trenches each have a conducting layer therein extending in the main surface in the direction from the n+ drain region toward the n+ source region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a main surface; a source region formed in said main surface of said semiconductor substrate; a drain region formed in said main surface and separated from said source region; an offset region formed in said main surface between said drain region and said source region, and separated from said source region; a gate electrode formed on said main surface and opposite to a region sandwiched between said source region and said offset region; a trench portion formed in said main surface in said offset region and extending in a direction from said drain region toward said source region; and a conducting layer formed in said trench portion and extending in said main surface in said direction from said drain region toward said source region.