Silicon Carbide Crystal Growth by Silicon Chemical Vapor Transport

摘要

In a method for growing bulk SiC single crystals using chemical vapor transport, wherein silicon acts as a chemical transport agent for carbon, a growth crucible is charged with a solid carbon source material and a SiC single crystal seed disposed therein in spaced relationship. A halosilane gas, such as SiCl4 and a reducing gas, such as H2, are introduced into the crucible via separate inlets and mix in the crucible interior. The crucible is heated in a manner that encourages chemical reaction between the halosilane gas and the reducing gas leading to the chemical reduction of the halosilane gas to elemental silicon (Si) vapor. The produced Si vapor is transported to the solid carbon source material where it reacts with the solid carbon source material yielding volatile Si-bearing and C-bearing molecules. The produced Si-bearing and C-bearing vapors are transported to the SiC single crystal seed and precipitate on the SiC single crystal seed causing growth of a SiC single crystal on the SiC single crystal seed.

主权项

1. A method for SiC crystal growth by chemical vapor transport with silicon comprising:
(a) providing a SiC growth system that includes a silicon carbide seed crystal and solid carbon source material positioned in spaced relation; (b) heating the SiC growth system and introducing into the SiC growth system a gaseous halosilane and a reducing gas, wherein the gaseous halosilane and the reducing gas react in the SiC growth system yielding elemental silicon vapor; (c) reacting the elemental silicon vapor of step (b) with the solid carbon source material of step (a) yielding silicon-bearing and carbon-bearing vapors; (d) transporting the silicon-bearing and carbon-bearing vapors of step (c) to the SiC seed of step (a); and (e) precipitating the silicon-bearing and carbon-bearing vapors of step (c) on the SiC seed of step (a) to grow the silicon carbide single crystal.