RAPID HEAT TREATMENT APPARATUS FOR CIGS THIN FILM

摘要

The present invention relates to a rapid heat treatment apparatus for a CIGS thin film. The rapid heat treatment apparatus for a CIGS thin film according to the present invention comprises: a load lock chamber into which a carrier box for receiving a precursor thin film formed by sequentially laminating copper, indium, gallium, and selenium is put, and which performs a first selenization process by heating the carrier box while transferring the carrier box in a traveling direction; a heating part which is provided with a plurality of chambers having different internal temperatures, and performs a second selenization process by heating the carrier box while moving the carrier box in a traveling direction, so as to form a CIGS light absorption layer; and a cooling part for cooling the carrier box received from the heating part.