发明名称 |
Semiconductor Device with Field Electrode Structures in a Cell Area and Termination Structures in an Edge Area |
摘要 |
A semiconductor device includes field electrode structures regularly arranged in lines in a cell area and forming a first portion of a regular pattern. Termination structures are formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the regular pattern. Cell mesas separate neighboring ones of the field electrode structures from each other in the cell area and include first portions of a drift zone, wherein a voltage applied to a gate electrode controls a current flow through the cell mesas. At least one doped region forms a homojunction with the drift zone in the inner edge area. |
申请公布号 |
US2016064547(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201514829526 |
申请日期 |
2015.08.18 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
Siemieniec Ralf;Blank Oliver;Hirler Franz;Hutzler Michael;Poelzl Martin |
分类号 |
H01L29/78;H01L29/06 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
field electrode structures arranged in a cell area and forming a first portion of a pattern; termination structures formed in an inner edge area surrounding the cell area, wherein at least portions of the termination structures form a second portion of the pattern; cell mesas separating neighboring ones of the field electrode structures from each other in the cell area; at least one gate electrode; at least one doped region forming a homojunction with a drift zone in the inner edge area. |
地址 |
Villach AT |