| 发明名称 |
UNDER-SPACER DOPING IN FIN-BASED SEMICONDUCTOR DEVICES |
| 摘要 |
A fin field effect transistor (FinFET) device and a method of fabricating the FinFET are described. The device includes a fin formed on a substrate, the fin including a channel region of the device and a spacer and a cap formed over a dummy gate line separating a source and drain of the device. The device also includes an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer. |
| 申请公布号 |
US2016064501(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201514879159 |
申请日期 |
2015.10.09 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basker Veeraraghavan S.;Cheng Kangguo;Khakifirooz Ali;Koburger, III Charles W. |
| 分类号 |
H01L29/423;H01L29/161;H01L29/167;H01L29/78 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A fin field effect transistor (FinFET) device, comprising:
a fin formed on a substrate, the fin including a channel region of the device; a spacer and a cap formed over a dummy gate line separating a source and drain of the device; and an epitaxial layer formed over portions of the fin, the epitaxial layer being included between the fin and the spacer. |
| 地址 |
Armonk NY US |
