FIN STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core.

主权项

1. A semiconductor device, comprising:
a source region; a drain region; a fin structure, comprising:
a fin core protruding from a substrate; anda fin shell covering a portion of a sidewall of the fin core; a gate dielectric covering the fin shell; and a gate electrode covering the gate dielectric, wherein the fin structure connects the source region and the drain region, and the fin shell serves as a channel region of the semiconductor device.