| 发明名称 |
LATERAL PiN DIODES AND SCHOTTKY DIODES |
| 摘要 |
Lateral PiN diodes and Schottky diodes with low parasitic capacitance and variable breakdown voltage structures and methods of manufacture are disclosed. The structure includes a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate. |
| 申请公布号 |
US2016064475(A1) |
申请公布日期 |
2016.03.03 |
| 申请号 |
US201414476185 |
申请日期 |
2014.09.03 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FEILCHENFELD Natalie B.;JAIN Vibhor;LIU Qizhi |
| 分类号 |
H01L29/06;H01L21/762;H01L27/08;H01L29/66;H01L29/868;H01L29/872 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure, comprising a diode with breakdown voltage determined by a dimension between p- and n-terminals formed in an i-region above a substrate. |
| 地址 |
Armonk NY US |
