| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell region and a peripheral circuit region arranged on a semiconductor substrate. In the peripheral circuit region, a stacked body including a tunnel insulating film, a floating gate electrode film, an inter-electrode insulating film, and a control gate electrode film stacked in this order, a first insulating film and a second insulating film are stacked on the semiconductor substrate. The peripheral circuit region includes a contact region where the stacked body removed a film above the floating gate electrode film, the first insulating film and the second insulating film are stacked. The peripheral circuit region includes contact provided within a region where the contact region is formed, and one end of the contact is in the second insulating film, and the other end of the contact is in the floating gate electrode film. |
| 主权项 |
1. A nonvolatile semiconductor memory device comprising a memory cell region and a peripheral circuit region arranged on a semiconductor substrate, wherein
the memory cell region is equipped with a plurality of memory cell transistors, each of the memory cell transistors comprising a stacked gate structure including a tunnel insulating film, a floating gate electrode film, an inter-electrode insulating film, and a control gate electrode film stacked in this order on the semiconductor substrate, in the peripheral circuit region, a stacked body including the tunnel insulating film, the floating gate electrode film, the inter-electrode insulating film, and the control gate electrode film stacked in this order, a first insulating film and a second insulating film are stacked on the semiconductor substrate, and the peripheral circuit region includes a contact region where the stacked body removed a film above the floating gate electrode film, the first insulating film and the second insulating film are stacked, and includes a contact provided within a region where the contact region is formed, one end of the contact being in the second insulating film, and the other end of the contact being in the floating gate electrode film. |
