FLASH MEMORY FABRICATION METHOD

摘要

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate comprising an active region, and successive layers of a tunnel oxide layer, a floating gate, a gate dielectric layer, a control gate overlying each other. A first portion of the tunnel oxide layer disposed on an edge of the active region has a thickness that is greater than a thickness of a second portion of the tunnel oxide layer disposed away from the edge of the active region. Such features ensure efficient reduction of read disturb errors of a Flash memory device.

主权项

1. A semiconductor device comprising:
a semiconductor substrate comprising an active region; a tunnel oxide layer overlying the semiconductor substrate; a floating gate overlying the tunnel oxide layer; a gate dielectric layer overlying the floating gate; and a control gate overlying the gate dielectric layer, wherein a first portion of the tunnel oxide layer disposed on an edge of the active region has a thickness greater than a thickness of a second portion of the tunnel oxide layer disposed away from the edge of the active region.